Structures for temperature sensors and infrared detectors
US6292089A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure for temperature sensors and infrared detectors. The structure is built-up on a substrate that includes a thermistor layer, wherein the resistance of the thermistor layer is temperature dependent. The substrate also includes an electric contact layer on both sides of the thermistor layer, and the resistance of the thermistor layer is measured between the contact layers. The thermistor layer includes a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers. One or more of the bandedge energy of the barrier layers, the quantum well layer doping level, the quantum well layer thickness, and the barrier layer thickness is adapted to obtain a temperature coefficient predetermined for the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.