Method and device for the programming of an electrically programmable non-volatile memory for improved reliability
US6292396A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2000 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Apr 21, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device for the programming of cells of an electrically programmable non-volatile memory. The device comprising a first reference input for receiving an erase signal for erasing one or more memory cells in the non-volatile memory and a second reference input for receiving an programming signal for programming one or more memory cells in the non-volatile memory. A regulation circuit coupled to the first reference input and coupled to the second reference input for regulating the magnitude of an erasure signal and for regulating the magnitude of a programming signal so that an electric field of approximate equal absolute magnitude is created on the floating gate of one or more memory cells during an erase type operation and an programming type operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.