Oxide thin film
US6294274A · kind A · utility
3,995Cited by
0References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.