Silicon with structured oxygen doping, its production and use
US6294726A · kind A · utility
16Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2000 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Jun 9, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in photovoltaics. Solar cells which are based on the material according to the invention exhibit high levels of efficiency despite the high oxygen content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.