Semiconductor device with Schottky layer
US6294801A · kind A · utility
24Cited by
5References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Apr 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.