Parallel-stripe type semiconductor device
US6294818A · kind A · utility
126Cited by
9References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 2000 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | May 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.