Patent · US Expired

In-situ nano-interconnected circuit devices and method for making the same

US6297063A · kind A · utility

107Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 1999
Grant dateOct 2, 2001
Priority date
Expiry dateOct 25, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/932
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires in-situ on at least one circuit substrate and then interconnecting the nanowires to a mating substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.