Method of manufacturing silicon carbide semiconductor device using active and inactive ion species
US6297100A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a vertical MOSFET, an inactive ion species is ion-implanted into a J-FET portion, a surface channel layer, and/or a base region. The inactive ion species fill intrinsic carbon vacancies or interact with interstitial Si atoms, which are possible origin or responsible for B-diffusion from the base region. Accordingly, the B-diffusion caused by the intrinsic carbon vacancies when the base region is formed is suppressed. The width of the J-FET portion is prevented from being decreased, thereby preventing an increase in resistance of the J-FET portion. Also, the conductive type of the surface channel layer is prevented from being inverted by diffused impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.