TFT substrate with low contact resistance and damage resistant terminals
US6297519A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Apr 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.