GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide
US6298077A · kind A · utility
8Cited by
2References
9Claims
0Family size
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Inventor
Key dates
| Filing date | Feb 16, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Feb 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3436
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaInAsP/AR GaInP laser diode is provided with an AlGaAs type II carrier blocking layer in the waveguide of the diode. The resulting diode exhibits a relatively low threshold current, an increased slope efficiency and characteristic T0 and T1, for the diodes are less limited by carrier leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.