Polishing material composition and polishing method for polishing LSI devices
US6299659A · kind A · utility
27Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2000 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | May 4, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 .mu.m and the average value is about 0.01-1.0 .mu.m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.