Method for fabricating semiconductor integrated circuit device
US6300190A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First, an insulating film is formed over the entire surface of a semiconductor substrate including a channel region for a field effect transistor. The insulating film has a gate electrode opening over the channel region. Next, a protective film is deposited over the entire surface of the insulating film. Then, a lower electrode, a capacitive insulating film and an upper electrode are formed in this order in a region on the protective film where a capacitor will be formed. Subsequently, part of the protective film, with which the gate electrode opening of the insulating film has been filled in, is removed, thereby exposing the semiconductor substrate within the gate electrode opening. And then a gate electrode is formed to fill in the gate electrode opening again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.