Patent · US Expired

Method and device for producing electrically conductive continuity in semiconductor components

US6300256A · kind A · utility

0Cited by

1References

42Claims

0Family size

Assignees

DR. JOHANNES HEIDENHAIN GMBH · DE
Silicon Sensor GmbH · DE

Inventors

Bernd Kriegel · Berlin, DE
Frank Kudella · Berlin, DE
Rene Arnold · Berlin, DE

Key dates

Filing date	Dec 20, 1999
Grant date	Oct 9, 2001
Priority date	—
Expiry date	Dec 20, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a process and a device for the production of electrically conductive passages in semiconductor components preferably positioned on a semiconductor, by means of thermo-migration through the production of a temperature gradient between two opposing outer surfaces of the semiconductor components and application of a conductive doping substance to a cooler outer surface. One outer surface of the semiconductor is positioned on a cooled sample take-up and the opposing outer surface is exposed to heat radiation, which can be controlled both with regard to its total efficiency and its efficiency distribution over the surface of the semiconductor. The total efficiency and/or the efficiency distribution of the heat radiation is adjusted depending upon the temperature measured on at least one temperature measurement point on the semiconductor and/or a semiconductor component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.