Lattice matched solar cell and method for manufacturing the same
US6300558A · kind A · utility
152Cited by
5References
26Claims
0Family size
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Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first In.sub.x Ga.sub.1-x As layer of first conductivity type formed on the buffer layers, and a second In.sub.x Ga.sub.1-x As layer of second conductivity type formed on the first In.sub.x Ga.sub.1-x As layer to form pn junction. Because the composition x of In contained in the first In.sub.x Ga.sub.1-x As layer and the second In.sub.x Ga.sub.1-x As layer is in a range of 0.005.ltoreq.x.ltoreq.0.015, the inexpensive and high conversion efficiency solar cell can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.