Ion source head
US6300636A · kind A · utility
7Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Oct 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved ion source head for use with an ion implantation machine includes an arc chamber within which a heated filament creates an ion plasma from a source gas. The source gas is introduced into the chamber evenly through at least four, but preferably six through hole openings in a bottom liner in the chamber. Even distribution of the gas entering the chamber reduces build-up and flaking of material in the chamber that can result in short circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.