Circuit including forward body bias from supply voltage and ground nodes
US6300819A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1998 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
One embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. Another embodiment of the invention includes a semiconductor circuit including a supply voltage node to provide a supply voltage and nFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the nFET transistors. Still another embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. The circuit also includes a supply voltage node to provide a supply voltage and nFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the nFET transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.