Semiconductor laser devices
US6301278A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1998 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Jul 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device has a semiconductor laser element placed inside a package on an electrically conductive submount such that one of the electrodes with one conduction type sandwiching its p-n junction is electrically connected to it. The submount is placed on a metallic heat sink, separated therefrom by a layer of an electrical insulator having a larger thermal conductivity than the submount. The other electrode of the laser element (of the opposite conduction type) is electrically connected to the heat sink, and one of externally extending lead pins is electrically connected to the submount. According to a preferred embodiment, the other electrode of the laser element is electrically connected instead to one of the lead pins and the submount is electrically connected instead to another of the lead pins. Thus, the capacitance of the submount and the inductance of the package will be in an electrically floating condition when the laser device is activated, and the device is adapted for high-frequency operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.