Patent · US Expired

Method to improve integrated circuit defect limited yield

US6301690A · kind A · utility

7Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 12, 1999
Grant dateOct 9, 2001
Priority date
Expiry dateJul 12, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for manufacturing an integrated circuit having improved defect-limited yield. Each conductor on the integrated circuit is represented as an electrical element of a network, having branch voltages and currents. The width of the conductor is advantageously selected to have the minimum width necessary to produce signal levels that have sufficient noise margins. An integrated circuit conductive grid is thus realized having a reduced cross sectional area along a portion of various conductor element lengths, to reduce the risk that particles produced during manufacturing will result in bridging of adjacent conductor elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.