Process and apparatus for producing pressurized oxygen and krypton/xenon by low-temperature fractionation of air
US6301929A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF25J2235/50
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The process and the apparatus serve for producing pressurized oxygen and krypton/xenon by low-temperature fractionation of air. The rectifying system has a low-pressure column (3) for the nitrogen-oxygen separation and a krypton-xenon enrichment column (15). Compressed and prepurified feed air (4) is introduced into the rectifying system. A first oxygen fraction (11) is taken off from the low-pressure column (3), brought (12) to an elevated pressure in the liquid state, vaporized and removed as gaseous pressurized oxygen product (24). In addition, a second oxygen fraction (16) is taken off from the low-pressure column (3) and passed (18) into the lower or central region of the krypton-xenon enrichment column (15). The first oxygen fraction (11) is taken off at least one actual or theoretical plate above the bottom of the low-pressure column (3) and, after the pressure elevation (12) is introduced (14) in the liquid state into the upper region of the krypton-xenon enrichment column (15). A krypton-enriched and/or xenon-enriched fraction (19) is taken off from the lower region of the krypton-xenon enrichment column (15). The pressurized oxygen product (24) is withdrawn in the gaseous…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.