Hierarchy and domain-balancing method and algorithm for serif mask design in microlithography
US6303253A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Mar 16, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure and method for performing optical proximity correction in photolithographic masks includes defining a hierarchy of inner bands adjacent and inside edges and ends of a mask structure within the photolithographic mask, defining a hierarchy of outer bands adjacent and outside edges and ends of said mask structure changing a transparency of part of the inner and outer bands for the mask structure to correct for optical proximity errors using predefined transparency changes, determining whether the predefined transparency changes affect the outer band of the mask structure or outer bands of other mask structures on the photolithographic mask, and altering the predefined transparency changes to prevent the predefined transparency changes from affecting the outer band and the outer bands. Domain-balancing method and algorithm are used to decide the position, shape, and size of serifs and holes in the predefined transparency changes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.