Method for preparing gallium nitride phosphor
US6303403A · kind A · utility
22Cited by
14References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Dec 27, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for preparing a gallium nitride phosphor which is capable of emitting light at luminance increased to a degree sufficient to permit the phosphor to be practically used. A dopant compound containing elements reacted with H.sub.2 and gasified by heating is arranged on an upstream side in a calcination oven in which NH.sub.3 is flowed and a matrix element compound is arranged on the downstream side therein, resulting in calcination of the compound being carried out. This permits GaN to be surrounded with ammonia and the dopant during the calcination, so that the GaN phosphor may be fully doped with the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.