Semiconductor light emitting element, and its manufacturing method
US6303405A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Sep 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a "lift-off layer" and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.