Linear image sensor
US6303919A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Apr 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A light receiving element is provided with a phototransistor and a light receiving MOS diode proximate thereto and having a gate electrode covering a portion of the base region of the phototransistor. The gate electrode permits transmission of a portion of received light. The light receiving MOS diode forms an inversion layer in a substrate adjacent the base of a phototransistor during the time photo charges are stored, and generated photo charges are stored in the inversion region and the base region of the phototransistor. During the storage state, the potential of the inversion region and the base region of the phototransistor is limited, so that the intensity of an electric field applied to an insulating film between the electrode and the semiconductor substrate is 0.7 MV/cm or less. Alternatively, the potential of the electrode in a waiting state is fixed or made floating, so that an electric field is not applied, and recombination at the surface of the semiconductor substrate is made stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.