Power sensor
US6303976A · kind A · utility
5Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | May 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a single cavity in a substrate, which may extend approximately the length of a device located on top of the substrate, and device produced thereby. The device has a length and a width, and may extend approximately the length of the substrate. After locating the device on the surface of the substrate, a first etchant is applied through openings on the surface of the substrate. Subsequently, a second etchant is applied through the same openings on the surface of the substrate. As a result, a single cavity is formed beneath the surface of the device, suspending the device and minimizing electrical coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.