Method of forming manufacturing semiconductor device
US6306183A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 1998 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Mar 30, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device for use with a single wafer type reduced pressure CVD apparatus having a heat processing chamber 1 and a wafer carrier 2 arranged in the heat processing chamber 1 and including a plurality of upper and lower stages, in which wafers W are mounted on respective stages of the wafer carrier 2, and are subjected to film formations process while they are being heated. When wafers W are introduced into the heat processing chamber 1 previously heated to a desired heat processing temperature, wafers W to be mounted on stages except for at least the lowermost stage of the wafer carrier 2 are left in the heat processing chamber 1 until central portions of the wafers W are heated to the vicinity of the temperature within the heat processing chamber 1, without immediately mounting them on the respective stages. Thereafter, the wafers W are mounted on the predetermined stages of the wafer carrier 2 for carrying out the film formation processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.