Compound semiconductor solar cell and production method thereof
US6307148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An indium layer and a copper layer, and whenever necessary, a gallium layer or a gallium-alloy layer, are laminated on an electrode film formed on one of the surfaces of a substrate to form a metallic film. The metallic film is then subjected to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of "CuInS.sub.2 or CuInSe.sub.2 " or "Cu(In, Ga)S.sub.2 or Cu(In, Ga)Se.sub.2 ". This p-type semiconductor layer is subjected to KCN treatment, for removing impurities such as copper sulfide, copper selenide, etc., by a KCN solution, and an n-type semiconductor layer is formed on this p-type semiconductor layer to form a solar cell. In this instance, the indium layer is formed under heating, or is heat-treated by heat-treatment while the surface of the indium layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.