Integrable ferromagnets for high density storage
US6307241A · kind A · utility
37Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/193
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Submicron ferromagnets, of selected size and spacing, are introduced into semiconductor by means of ion implantation and subsequent heat treatments. The resulting semiconductor contains ferromagnets at high density and which exhibit Curie temperatures exceeding room temperature. The semiconductor retains its intrinsic physical properties, such as optical and transport properties, after incorporation of the ferromagnetic nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.