Micro-mechanical inertial sensors
US6308569A · kind A · utility
27Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Micromechanical inertial sensors are formed of a plurality of substantially-planar semiconductor wafers interspersed with oxide layers. The sensitive element is located within an internal aperture of a wafer of the device and is separate therefrom. It is connected to an overlying oxide layer at pedestals that minimize contact area to thereby reduce stray capacitance. Portions of side edges of the various wafers are successively recessed to create topside-exposed wafer sections that permit the grounding of all exposed portions of the device as operational potentials are applied to internal electrodes and sensitive elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.