Method for producing a semiconductor material

US6309467A · kind A · utility

Assignee

• Wacker Chemie AG · DE

Inventors

• Hanns Wochner · Burghausen, DE
• Theresia Bauer · Altötting, DE
• Josef Dietl · Schallstadt, DE
• Werner Ott · Hülben, DE
• Herbert Pichler · Ach, AT
• Wilhelm Schmidbauer · Emmerting, DE
• Dieter Seifert · Vilshofen an der Donau, DE
• Susanne Weizbauer · Rosenheim, DE

Key dates

• Filing date: Sep 15, 1998
• Grant date: Oct 30, 2001
• Expiry date: Sep 15, 2018

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01B33/037
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66.times.10.sup.-11 g/cm.sup.2. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.