Process for producing semiconductor substrate of SOI structure
US6309945A · kind A · utility
31Cited by
7References
85Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1993 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Jan 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.