Method for crystallizing amorphous silicon
US6309951A · kind A · utility
16Cited by
3References
41Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 9, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Jun 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of crystallizing an amorphous film comprises the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a Co thin film, and crystallizing the amorphous film by forming and electric field in the amorphous film and the Co thin film, while simultaneously subjecting the amorphous film and the Co thin film to a thermal treatment, thereby crystallizing the amorphous film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.