Semiconductor device and method of manufacturing the same
US6309958A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 8, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Sep 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, adjacent ones of aluminum wirings are electrically isolated from each other through an interlayer insulation film containing a void space portion which is disposed between the adjacent ones of the aluminum wirings in a condition in which the void space portion makes its lower surface substantially flush with a lower surface of each of the aluminum wirings. A trench is formed between the adjacent ones of the aluminum wirings in an upper surface of a semiconductor substrate. Each of the trench and the aluminum wirings has its side surfaces covered with a damage preventing silicon oxide film, i.e., side-wall insulation film which is used to form the trench. The trench is filled with the interlayer insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.