Patent · US Expired

Electric voltage source for semiconductor components

US6310280A · kind A · utility

2Cited by

2References

6Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Robert Aigner · Winter Garden, US
Christofer Hierold · Munich, DE
Frank Schmidt · Zorneding, DE

Key dates

Filing date	Oct 18, 1999
Grant date	Oct 30, 2001
Priority date	—
Expiry date	Oct 18, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component comprising a layer of semiconductor material that is doped region-by-region in alternating fashion for positive and negative electrical conductivities. This layer is arranged perpendicular to layer surfaces between thermally conductive layers in such a way that the junctions between two successive regions having different electrical conductivities are electrically insulated outwardly, and are alternately in thermal contact with one of the thermally conductive layers and are thermally insulated from the respective other thermally conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.