Integrated circuit inductor with high self-resonance frequency
US6310387A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | May 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.