CMOS semiconductor integrated circuit
US6310492A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2000 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00315
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In order to reduce power consumption, a power supply for a digital circuit portion is shut off, so that the output voltage of the power supply becomes the zero level. A CMOS (complementary metal oxide semiconductor) inverter has a P-channel FET (field effect transistor) with a gate electrode formed of P-type polysilicon. A source electrode of the P-channel FET is connected to the power supply and a back gate electrode of the P-channel FET is in direct connection with the aforesaid source electrode. The P-channel FET is placed in a state of not functioning as a transistor when the power supply is shut off in a low power consumption mode. However, in order to prevent the P-channel FET from undergoing characteristic degradation in that mode, there is the provision of a pull-down switch capable of fixing, in the mode, the voltage of the gate electrode of the P-channel FET at the zero level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.