Method and an apparatus for forming an under bump metallization structure
US6312830A · kind A · utility
10Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the invention involves a refractory layer formed over a substrate during rapid thermal processing in which ambient hydrogen is used in a thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350.degree. C. to approximately 550.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.