Magnetic tunneling element and manufacturing method therefor
US6312840A · kind A · utility
7Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer and a second magnetic layer formed on the tunnel barrier layer. The tunnel current flows via the tunnel barrier layer between the first magnetic metal layer and the second magnetic metal layer. The surface of the first magnetic layer carrying the tunnel barrier layer has a surface roughness (Ra) of 0.3 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.