Method for manufacturing semiconductor devices
US6313004A · kind A · utility
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2References
23Claims
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Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
After HSG-Si 15a is formed on the surface of a polycrystal silicon film 15, heat treatment is conducted on it using a phosphorus diffusion apparatus in an atmosphere of a mixture gas containing POCl.sub.3, O.sub.2, and N.sub.2 gases in such a situation that the O.sub.2 /POCl.sub.3 mole ratio is adjusted into 0.2 through 1.5, thus diffusing phosphorus into the HSG-Si 15a. With this, it is possible to suppress the corrosion of silicon by the chlorine radicals and inhibit the accelerated oxidation of silicon, thus preventing the reduction of the HSG-Si 15a.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.