Semiconductor substrate and manufacturing method of semiconductor substrate
US6313014A · kind A · utility
52Cited by
3References
55Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 14, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jun 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatment utilizing the ion-implantation layer. An SOI substrate having a single-crystal silicon layer (SOI layer) which is formed on the BOX layer and has a remarkably reduced number of defects such as COPs is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.