Plasma enhanced CVD process for rapidly growing semiconductor films
US6313017A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Sep 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of epitaxially growing a Group IV semiconductor film on a surface (WS) of a substrate (W) made of a material comprising one of Si or Ge in a reaction chamber (14) under vacuum. The process includes the steps of heating the substrate to a temperature between 300.degree. C. and 650.degree. C., then introducing into the reaction chamber a first reactant gas containing one of Si and Ge corresponding to the material comprising the substrate while bombarding the surface with energetic ions having a flux ratio of about between 0.5 and 5 eV/adatom. The first reactant gas may be silane and the substrate made of Si, in which case the semiconductor film grown is Si. Alternatively, the first reactant gas may be germane and the substrate made of Ge, in which case the semiconductor film grown is Ge. Likewise, compounds of Si, Ge and C may be formed by introducing reactant gases comprising Si, Ge and C, for example silane, germane and methane, in the appropriate ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.