Circuit-integrated light-receiving device
US6313484A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Dec 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing c…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.