Chemical amplified photoresist composition
US6316159A · kind A · utility
7Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/115
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II): ##STR1## Wherein R is hydrogen or C.sub.1 -C.sub.4 alkyl group; R' is C.sub.1 -C.sub.4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.