Laser annealing method
US6316338A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jun 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser annealing method for crystallizing a silicon film includes preparing a laser beam having a width smaller than a predetermined width that is two times longer than a silicon grain grown by a single shot of the laser beam in which energy of the laser beam is determined to melt down a silicon film completely, carrying out a first laser beam irradiation on the silicon film with the laser beam to grow silicon grains, displacing the laser beam on the silicon film by an overlap ratio under 1/2 of the width of the laser beam, and carrying out a second laser beam irradiation on the silicon film with the laser beam to grow the silicon grains again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.