Low turn-on voltage indium phosphide Schottky device and method

US6316342A · kind A · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Adele Schmitz · Thousand Oaks, US
• Robert H. Walden · Newbury Park, US
• Mark Lui · Los Angeles, US
• Mark Yu · Taichung, TW

Key dates

• Filing date: Aug 15, 2000
• Grant date: Nov 13, 2001
• Expiry date: Aug 15, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/852

Abstract

A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including In.sub.x Al.sub.1-x AS with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters