Method of forming transparent conductive film and transparent conductive film formed by the method
US6316343A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/086
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a transparent conductive film is provided, which is capable of obtaining a transparent conductive film having both reduced specific resistance and reduced film compressive stress, and a transparent conductive film manufactured by the same method is also provided. The temperature of a substrate placed in opposed relation to an anode is set to not more than 130.degree. C. A plasma beam is generated by discharge plasma generating means constituting a cathode and guided to the anode such that an evaporation material received in the anode evaporates and particles of the evaporated materials are ionized, to thereby form the transparent conductive film on a surface of the substrate. The transparent conductive film thus formed is subjected to a heat treatment at a temperature of not less than 180.degree. C. The resulting transparent conductive film has a specific resistivity of 230 .mu..OMEGA..multidot.cm or less and a film compressive stress of 0.35 GPa or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.