T-Gate transistor with improved SOI body contact structure
US6316808A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
Disclosed is a type "BC" body contacted SOI transistor and process for making these transistors in a manufacturing environment by providing a structure and process which removes overlay tolerance from the effective transistor width. The width is determined by RX on the top side, but by PC on the other with source and drain connected together. In the preferred embodiment such a structure is used as the top part of the SOI transistor with the bottom part a mirror image of the top part such that the effect of the PC to RX overlay is reversed, and the top part and bottom part are connected by a common body part. For the bottom part an "UP misalignment will make the device with large, while a "DOWN" misalignment will make the device width smaller. Thus, if PC is misalleged with respect to RX, any width errors introduced in the top part of the transistor will be exactly canceled by the bottom part of the transistor. An alternative DOG BONE embodiment is also illustrated which also provides a structure which removes the overlay tolerance from the effective transistor width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.