Surface acoustic wave device using a leaky surface acoustic wave with an optimized cut angle of a piezoelectric substrate
US6317015A · kind A · utility
10Cited by
14References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6483
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO.sub.3 and an electrode pattern provided on the piezoelectric substrate. The electrode pattern contains Al as a primary component and has a thickness in a range of 0.03-0.15 times a wavelength of a surface acoustic wave excited on the piezoelectric substrate. The piezoelectric substrate has an orientation rotated about an X-axis thereof from a Y-axis thereof toward a Z-axis thereof, with a rotational angle of 38-46.degree..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.