Method of making thin film piezoresistive sensor
US6319743A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2293
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Semiconductor piezoresistive sensors are formed by a process using selective laser activation of a doped semiconductor surface. The substrate is a flexible membrane such as a diaphragm or bellows. A layer of insulative dielectric material is first applied to the substrate. A layer of highly resistive doped semiconductor material is then deposited on top of the dielectric layer. Through the use of an alignment device one or more piezoresistive sensors are formed by use of laser annealing of selected areas of the semiconductor material such that the annealed areas have a resistance suitable for use as sensors. Metal contacts are then applied over the end portions of sensors and form an electrical connection to the sensors. The non-annealed portions of doped semiconductor layer act as insulators between the formed piezoresistive sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.