Substrate with conductor formed of low-resistance aluminum alloy
US6320138A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1998 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Mar 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wiring substrate is disclosed, which has optimal characteristics for, for example, an active matrix type liquid crystal display device with a thin film transistor. Wiring formed of an Al-Nd-Ti alloy thin film is formed on a glass substrate, and if necessary, a semiconductor element which is electrically connected to the wiring is formed. In this case, the specific resistance of the Al-Nd-Ti alloy thin film is about 8 .mu..OMEGA. cm if the Nd concentration is 0.75 at % and the Ti concentration is 0.5 at %. Further, even if the resultant substrate is heated at 240-270 C. after the formation of the wiring, occurrence of a hillock and a pinhole is substantially completely suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.