Quantum tunneling effect device and semiconductor composite substrate
US6320220A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in corresponding manner to both ends of the channel region, and through which a tunnel current is let to flow into the channel region, and a third terminal G giving a high frequency vibration to a potential barrier of the channel region through the insulating film, wherein the tunnel current flowing into the channel region is increased as a value of an exponential function is increased with a predetermined threshold vibration frequency as a boundary value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.